page:p2 - p 1 plastic - encapsulate trans istors guangdong hottech industrial co,. ltd. fe a tures complimentary to ss8 5 50 marking : y 1 maximum ratings (ta=25 unless otherwise noted) par a met e r symbol v alue uni t col l ect or - ba s e v o l t age v cbo 40 v col l ector - emitter v o l t age v ceo 2 5 v emitter - base v o l t a g e v ebo 5 v col l ector cur re n t - conti n u o us i c 1 500 m a col l ector p o w e r dissi p a t i on p c 3 00 m w juncti o n t emperature t j 150 s torage t e mp e rature t stg - 55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parame t e r symbol t est c o n d iti on s m in t yp m ax u nit collector - base breakd o w n v o l t age v cbo i c = 10 0 a, i e =0 40 v collector - emitter bre a kd o w n v ol t age v ceo i c = 0.1ma, i b =0 25 v emitter - ba s e breakd o w n v o l t age v ebo i e = 10 0 a, i c =0 5 v collector cut - off current i cb o v cb =40 v , i e =0 0.1 a collector cut - off current i ceo v cb =20 v , i e =0 0.1 a emitter cut - off current i ebo v eb = 5 v , i c =0 0.1 a dc cur r ent gain h fe(1) v ce =1 v , i c = 100ma 120 400 h fe(2) v ce =1 v , i c = 800ma 40 collecto r - emitter satu r ation v o l t age v ce(sat) i c =800ma, i b = 80ma 0.5 v ba s e - emitt e r sat u rati o n v o l t a g e v be(sat) i c =800ma, i b = 80ma 1.2 v t r a n s ition fr e qu e n c y f t v ce =10 v , i c = 50ma f = 30mhz 100 mhz classification of h fe rank l h j range 1 20 - 200 2 00 - 350 3 00 - 400 ( n p n ) 1. base 2. emitter sot - 23 3. collecto SS8050
page:p2 - p 2 plastic - encapsulate trans istors guangdong hottech industrial co,. ltd. typical characteristics 0 0.4 0.8 1.2 1.6 2.0 0.1 0.2 0.3 0.4 0.5 i b = 3.0ma i b = 2.5ma i b = 2.0ma i b = 1.5ma i b = 1.0ma i b = 0.5ma i c [ a], collector current v ce [v], collector-emitter voltage 0.1 1 10 100 1000 1 10 100 1000 v ce = 1v h fe , dc current gain i c [ma], collector current 0.1 1 10 100 1000 10 100 1000 10000 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[mv], saturation voltage i c [ma], collector current 0.00.20.40.60.81.01.2 0.1 1 10 100 v ce = 1v i c [ma], collector current v be [v], base-emitter voltage 110100 1 10 100 1000 i e = 0 f = 1mhz c ob [pf], capacitance v cb [v], collector-base voltage 1 10 100 400 1 10 100 1000 v ce = 10v f t [mhz], current gain bandwidth product i c [ma], collector current SS8050
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